| PART |
Description |
Maker |
| HY62SF16404E-SF HY62SF16404E-SFI HY62SF16404E-DF H |
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM
|
Hynix Semiconductor
|
| EM644FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM643FV16FU |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| 27C4111-90 |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE
|
Macronix International Co., Ltd.
|
| MX27C4111 27C4111 |
4M-BIT [512K x8/256K x16] CMOS EPROM
From old datasheet system
|
Macronix 旺宏
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| HY62SF16403ALLM-10 HY62SF16403ALLM-10I HY62SF16403 |
x16 SRAM
x16|1.8V|85/100|Super Low Power Slow SRAM - 4M x16 | 1.8 | 85/100 |超级低功耗SRAM的速度 4
|
Alpha Industries, Inc.
|
| HY62LF16404C |
Super Low Power Slow SRAM - 4Mb
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| AS6C4016 |
256K X 16 BIT SUPER LOW POWER CMOS SRAM
Fully static operation
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Alliance Semiconductor ...
|
| HY62UF16806B-DFC HY62UF16806B-DFI HY62UF16806B-C H |
x16|3V|55/70/85|Super Low Power Slow SRAM - 8M x16 | 3V的| 55/70/85 |超级低功耗SRAM的速度 800
512Kx16bit full CMOS SRAM
|
GE Security, Inc.
Hynix Semiconductor
|
| K6F1616T6B-TF70 K6F1616T6B-TF55 K6F1616T6B K6F1616 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
| HY62SF16406E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
